publication order number: NTF3055L108/d ? semiconductor components industries, llc, 2004 february, 2004 ? rev. 2 1 NTF3055L108 preferred device power mosfet 3.0 a, 60 v, logic level n?channel sot?223 designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? pb?free packages are available applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 60 vdc drain?to?gate voltage (r gs = 1.0 m ) v dgr 60 vdc gate?to?source voltage ? continuous ? non?repetitive (t p 10 ms) v gs 15 20 vdc vpk drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? single pulse (t p 10 s) i d i d i dm 3.0 1.4 9.0 adc apk total power dissipation @ t a = 25 c (note 1) total power dissipation @ t a = 25 c (note 2) derate above 25 c p d 2.1 1.3 0.014 watts watts w/ c operating and storage temperature range t j , t stg ?55 to 175 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 25 vdc, v gs = 5.0 vdc, i l (pk) = 7.0 apk, l = 3.0 mh, v ds = 60 vdc) e as 74 mj thermal resistance ?junction?to?ambient (note 1) ?junction?to?ambient (note 2) r ja r ja 72.3 114 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 1 pad size, 1 oz. (cu. area 0.0995 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, 2?2.4 oz. (cu. area 0.272 in 2 ). d g s 1 2 3 4 3.0 a, 60 v r ds(on) = 120 m n?channel sot?223 case 318e style 3 lww marking diagram 3055l 3055l = device code l = location code ww = work week pin assignment 3 2 1 4 gate drain source drain preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information http://onsemi.com ( datasheet : )
NTF3055L108 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? 68 68 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 3) gate threshold voltage (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.68 4.6 2.0 ? vdc mv/ c static drain?to?source on?resistance (note 3) (v gs = 5.0 vdc, i d = 1.5 adc) r ds(on) ? 92 120 m static drain?to?source on?resistance (note 3) (v gs = 5.0 vdc, i d = 3.0 adc) (v gs = 5.0 vdc, i d = 1.5 adc, t j = 150 c) v ds(on) ? 0.290 0.250 0.43 ? vdc forward transconductance (note 3) (v ds = 7.0 vdc, i d = 3.0 adc) g fs ? 5.7 ? mhos dynamic characteristics input capacitance (v 25 vd v 0v c iss ? 313 440 pf output capacitance (v ds = 25 vdc, v gs = 0 v, f = 1.0 mhz ) c oss ? 112 160 transfer capacitance f = 1 . 0 mhz) c rss ? 40 60 switching characteristics (note 4) turn?on delay time t d(on) ? 11 25 ns rise time (v dd = 30 vdc, i d = 3.0 adc, v gs =50vdc t r ? 35 70 turn?off delay time v gs = 5.0 vdc, r g = 9.1 ) (note 3) t d(off) ? 22 45 fall time r g 9.1 ) (note 3) t f ? 27 60 gate charge (v 48 vd i 30ad q t ? 7.6 15 nc (v ds = 48 vdc, i d = 3.0 adc, v gs = 5.0 vdc ) ( note 3 ) q 1 ? 1.4 ? v gs = 5 . 0 vdc) (note 3) q 2 ? 4.0 ? source?drain diode characteristics forward on?voltage (i s = 3.0 adc, v gs = 0 vdc) (i s = 3.0 adc, v gs = 0 vdc, t j = 150 c) (note 3) v sd ? ? 0.87 0.72 1.0 ? vdc reverse recovery time t rr ? 35 ? ns (i s = 3.0 adc, v gs = 0 vdc, t a ? 21 ? (i s 3 . 0 adc , v gs 0 vdc , di s /dt = 100 a/ s) (note 3) t b ? 14 ? reverse recovery stored charge q rr ? 0.044 ? c 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. switching characteristics are independent of operating junction temperatures.
NTF3055L108 http://onsemi.com 3 figure 1. on?region characteristics figure 2. transfer characteristics figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage v gs, gate?to?source voltage (volts) i d, drain current (amps) t j = 25 c t j = 100 c t j = ?55 c 0 0.16 0.14 0.12 0.1 0.08 0.02 146 i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) r ds(on), drain?to?source resistance ( ) v gs = 10 v 2 1.8 1.6 1.4 t j , junction temperature ( c) r ds(on), drain?to?source resistance (normalized) ?50 50 25 0 ?25 75 125 100 i d = 1.5 a v gs = 5 v 0.8 0.6 150 1 10 1000 10000 v ds, drain?to?source voltage (volts) i dss , leakage (na) 04060 30 20 10 50 100 5 3 0 2 5 3 2 1 v ds, drain?to?source voltage (volts) i d, drain current (amps) 0 0.5 6 v gs = 5 v v gs = 2.5 v v gs = 6 v v gs = 10 v v gs = 3 v 4 1 1.5 2.5 15 24 1.5 2.5 3 3.5 4.5 0.06 0.04 2 v gs, gate?to?source voltage (volts) 1.2 3 2 5 0 6 4 1 3 0 0.16 0.14 0.12 0.1 0.08 0.02 146 5 3 0.06 0.04 2 1 175 v gs = 2.8 v v gs = 3.2 v v gs = 3.4 v v gs = 3.5 v v gs = 4.5 v t j = 150 c t j = 100 c t j = 25 c t j = 100 c t j = ?55 c t j = 25 c t j = 100 c t j = ?55 c v ds > = 10 v v gs = 0 v
NTF3055L108 http://onsemi.com 4 10 10 15 5 020 525 r ds(on) limit v gs 100 10 1 0.01 1000 10 1 6 5 4 3 2 1 0 60 20 10 0 3.2 2.8 2.4 2 0 1000 800 600 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 400 200 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v gs , gate?to?source voltage (volts) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (volts) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain?to?source avalanche energy (mj) 057 6 4 28 1 10 100 0.54 0.7 0.82 0.66 0.62 0.86 0.58 0.1 10 100 1 25 125 150 100 75 175 50 i d = 3 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1.6 1.2 0.74 0.78 c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 3 a v gs = 5 v v gs = 0 v t j = 25 c i d = 7 a 1 ms 100 s 10 ms dc t r t d(off) t d(on) v ds 0.9 0.1 30 40 50 q 2 q 1 q t 70 80 0 3 1 100 0.8 0.4 t f thermal limit package limit
NTF3055L108 http://onsemi.com 5 10 1 0.001 100 10 1 0.1 0.001 1000 r(t), effective transient thermal response resistance (normalized) t, time (s) 1 x 1 inch 1 oz. cu pad (3 x 3 inch fr4) figure 13. thermal response 0.1 0.01 0.01 0.0001 0.00001 ordering information device package shipping 2 NTF3055L108t1 sot?223 (to?261) 1000 / tape & reel NTF3055L108t1g sot?223 (to?261) (pb?free) 1000 / tape & reel NTF3055L108t3 sot?223 (to?261) 4000 / tape & reel NTF3055L108t3g sot?223 (to?261) (pb?free) 4000 / tape & reel NTF3055L108t3lf sot?223 (to?261) 4000 / tape & reel NTF3055L108t3lfg sot?223 (to?261) (pb?free) 4000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTF3055L108 http://onsemi.com 6 package dimensions style 3: pin 1. gate 2. drain 3. source 4. drain h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. sot?223 (to?261) case 318e?04 issue k *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.5 0.059 sot?223 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTF3055L108/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
